Description
May 10, 2012 STD3NM60N . N-channel 600 V, 1.6 , 3.3 A, MDmesh II Power MOSFET in DPAK package. Datasheet preliminary data. Features. Sep 2, 2009 STD3NM60 , STD3NM60 -1. N-channel 600 V, 1.3 , 3 A TO-220, DPAK, IPAK. Zener-protected MDmesh Power MOSFET. Features.
Part Number | STD3NM60N |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ADI Electronics |
Description | MOSFET N-CH 600V 3.3A DPAK |
Series | MDmesh,II |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 9.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 188pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Rds On (Max) @ Id, Vgs | 1.8 Ohm @ 1.65A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
STD3NM60N
LINEAR/ADI
12800
0.09
Sunton Electronics Co., Limited
STD3NM60N
ADI/
9000
1.47
Fairstock HK Limited
STD3NM60N
ADI
73584
2.85
HK HEQING ELECTRONICS LIMITED
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15000
4.23
Corich International Ltd.
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200000
5.61
Shenzhen WTX Capacitor Co., Ltd.