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Description
Si2337DS - T1 - E3 (Lead (Pb)-free). Si2337DS - T1 - GE3 (Lead (Pb)-free and halogen-free). FEATURES. TrenchFET power MOSFET. Material categorization:. SI2337DS - T1 - E3 Texas Instruments Incorporated (TI) reference designs are solely intended to assist designers ( Buyers ) who are developing systems that. Vishay SI2337DS - T1 - GE3 . Q1. 1. Optocoupler transistor (SOIC 4). Avago ACPL- 217-56AE. R2, R3, R9, R12 4. 1 ohm 1% resistors (0603). R4, R7. 2. 24.9k ohm VISHAY, Si2337DS - T1 - GE3 . 29. 1. RCS1. RES., CHIP, 0.005 , 1W, 1%, 0815. SUSUMU, RL3720WT-R005-F. 30. 1. R5. RES., CHIP, 40.2k, 0.1W, 1% 0603. Vishay SI2337DS - T1 - GE3 . Q1, Q2. 2. 30V PNP transistors (SOT23). Diodes Inc. FMMT549ATA. Q4. 1. Optocoupler transistor (SOIC 4). Avago ACPL-217-56AE.
| Part Number | SI2337DST1GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ADI Electronics |
| Description | MOSFET P-CH 80V 2.2A SOT23-3 |
| Series | TrenchFET |
| Packaging | Cut Tape (CT) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 1.2A, 10V |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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