Part Number | SI2308DS-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ADI Electronics |
Description | MOSFET N-CH 60V 2A SOT23-3 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2308DS-T1-E3
LINEAR/ADI
7364
1.38
HK HEQING ELECTRONICS LIMITED
SI2308DS-T1-E3
ADI/
18794
2.5775
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI2308DS-T1-E3
ADI
30000
3.775
Nosin (HK) Electronics Co.
SI2308DST1E3
ADI Electronics
3450
4.9725
N&S Electronic Co., Limited
SI2308DS-T1-E3
LINEAR/ADI
50000
6.17
Belt (HK) Electronics Co