(4/5) based on 14 customer reviews
Description
MOSFET 2N-CH 60V 10A SO8FL Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25～C: 10A Rds On (Max) @ Id, Vgs: 13 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250米A Gate Charge (Qg) @ Vgs: 30.5nC @ 10V Input Capacitance (Ciss) @ Vds: 1560pF @ 25V Power - Max: 3.1W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
| Part Number | NVMFD5873NLWFT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | ADI Electronics |
| Description | MOSFET 2N-CH 60V 10A SO8FL |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 25V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) |
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NVMFD5873NLWFT1G
LINEAR/ADI
6000
0.79
HK HEQING ELECTRONICS LIMITED
NVMFD5873NLWFT1G
ADI/
5000000
2.1175
Hongkong Shengshi Electronics Limited
NVMFD5873NLWFT1G
ADI
55300
3.445
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NVMFD5873NLWFT1G
ADI Electronics
5000
4.7725
IC SHOP ELECTRONICS CO., LIMITED
NVMFD5873NLWFT1G
LINEAR/ADI
2090
6.1
Yingxinyuan INT'L (Group) Limited
