Description
MJE340 /D. MJE340G. Plastic Medium-Power. NPN Silicon Transistor. This device is useful for high voltage general purpose applications. Features. Suitable Nov 10, 2011 MJE340 . MJE350. Complementary silicon power transistors. Features. STMicroelectronics preferred salestypes. Complementary NPN CP310- MJE340 . NPN - High Voltage Transistor Die. Die Size. 26 x 26 MILS. Die Thickness. 9.0 MILS. Base Bonding Pad Size. 6.1 x 4.9 MILS. Emitter Bonding Electrically Similar to Popular MJE340 and MJE350. Epoxy Meets UL 94 V 0 @ 0.125 in. NJV Prefix for Automotive and Other Applications Requiring. Complement to MJE340 . These Devices are Pb Free and are RoHS Compliant *. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. Collector-Emitter Voltage.
Part Number | MJE340 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Single |
Brand | ADI Electronics |
Description | TRANS NPN 300V 0.5A SOT-32 |
Series | - |
Packaging | Tube |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Vce Saturation (Max) @ Ib, Ic | - |
Current - Collector Cutoff (Max) | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Power - Max | 20.8W |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | SOT-32-3 |
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