Part Number | IPD60R750E6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ADI Electronics |
Description | MOSFET N-CH 600V 5.7A TO252-3 |
Series | CoolMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 373pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 750 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
IPD60R750E6
LINEAR/ADI
27500
1.46
Acon Electronics Limited
IPD60R750E6
ADI/
12500
2.575
E-Core Electronics Co.
IPD60R750E6
ADI
8000
3.69
Ysx Tech Co., Limited
IPD60R750E6
ADI Electronics
12000
4.805
SIC ELECTRONICS LIMITED
IPD60R750E6
LINEAR/ADI
1800
5.92
Yingxinyuan INT'L (Group) Limited