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Description
Datasheet Mar 1, 2005 The FDS6986AS is designed to replace two single SO-. 8 MOSFETs and Schottky diode in synchronous. DC:DC power supplies that provide Dec 11, 2015 FDS6986AS . SOIC-8 (CuBW-Gs). GEM. GEM. 0.090751. 1. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Jan 8, 2016 FDS6986AS . SOIC-8 (CuBW-Gs). Jan 08, 2016. 1.0. GEM. 0.090751 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Part. Quantity. C1,C3. 33 F. 2. C2. 1 F. 1. C4,C6. 0.1 F. 2. C5. 1 F / 6.3 V. 1. C7. 350 F. 1. C10. 33 nF. 1. D1. MBR0540. 1. L1. 1 H. 1. Q2. FDS6986AS . 1. Nov 1, 2010 FDS6986AS (1). DDR Controller. 1 U1. Fairchild. Semiconductor. FAN5236. Note: 1. Suitable for typical notebook computer application of 4A
| Part Number | FDS6986AS |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | ADI Electronics |
| Description | MOSFET 2N-CH 30V 6.5A/7.9A 8SOIC |
| Series | PowerTrench, SyncFET |
| Packaging | 2 N-Channel (Dual) |
| FET Type | Cut Tape (CT) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A, 7.9A |
| Rds On (Max) @ Id, Vgs | 29 mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
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