Description
Q1: Fairchild Semiconductor FDR6674A . L1: Vishay IHLP-5050CE. C2: Sanyo 6TPC100M. 2 3 6 7. 2. 5. 1 F. C1. 47 F. Figure 24. Application Circuit, 12 V to Transistor, MOSFET, Nch, 11.5A, 30V 9.5 millohm. 0.160 x 0.130 Fairchild. FDR6674A . 5. R1, R4, R7, R10,. R12. Resistor, Chip, 10.0k-Ohms, 1/16-W, 1%. 603. For this design, a Fairchild FDR6674A 30-V n-channel MOSFET is used as the low-side FET. This particular FET is designed specifically to be used as a FDR6674A . NMOS. 0.23. 9.5. 11.5. Fairchild. FDR840P. PMOS. 0.6. 1.0. 3.3. 12. 10. Fairchild. *Recommend transistors in typical application circuit Figure 1.
Part Number | FDR6674A |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ADI Electronics |
Description | MOSFET N-CH 30V 11.5A SSOT-8 |
Series | PowerTrench |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5070pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 10.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT,8 |
Package / Case | 8-SMD, Gull Wing |
Image |
FDR6674A
LINEAR/ADI
1000
1.44
MY Group (Asia) Limited
FDR6674A
ADI/
16328
2.5275
SHENZHEN NEW ENERGY ELECTRONIC TECH.,LIMITED
FDR6674A
ADI
10000
3.615
KK Wisdom Limited
FDR6674A
ADI Electronics
6821
4.7025
MASSTOCK ELECTRONICS LIMITED
FDR6674A
LINEAR/ADI
55289
5.79
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED