Part Number | FDB28N30TM |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ADI Electronics |
Description | MOSFET N-CH 300V 28A D2PAK |
Series | UniFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 129 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D²ÂPAK (TO-263AB) |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
FDB28N30TM
LINEAR/ADI
32400
1.67
HK HEQING ELECTRONICS LIMITED
FDB28N30TM
ADI/
3000
2.6675
Shenzhen Qiangneng Electronics Co., Ltd.
FDB28N30TM
ADI
10000
3.665
HONG KONG HORNG SHING LIMITED
FDB28N30TM
ADI Electronics
184
4.6625
WIN AND WIN ELECTRONICS LIMITED
FDB28N30TM
LINEAR/ADI
9000
5.66
Nosin (HK) Electronics Co.