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Description
Datasheet nC. 2010 Fairchild Semiconductor Corporation. FDB2532_F085 Rev. A. FD. B. 2. 5. 32_F085 N-Channel PowerTrench MOSFET . FDB2532 . FDB2532_F085. Mar 24, 2015 Requester Item Number. Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site. Weight*. UOM. Unit Type. FDB2532 . Material Declaration Processing Information. FSID. Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDB2532 . TO263- 2 Mar 26, 2008 150V, 16m n-channel MOSFET (D2PAK). Fairchild FDB2532 or. Vishay SUM85N15-19-T1-E3. 1. Q2. 100V, bipolar PNP transistor (SOT23). 65. 105. 231 to-263 (d2PAK). FdB110N15A. 150. 0.011. 47. 92. 234 to-263 ( d2PAK). FdB2532 . 150. 0.016. 82. 79. 310 to-263 (d2PAK). FdB2552. 150. 0.036. 39.
| Part Number | FDB2532 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ADI Electronics |
| Description | MOSFET N-CH 150V 79A D2PAK |
| Series | PowerTrench |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 79A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5870pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 33A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²ÂPAK (TO-263AB) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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