Part Number | C3M0120090J |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | ADI Electronics |
Description | MOSFET N-CH 900V 22A |
Series | C3M |
Packaging | Tube |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Vgs(th) (Max) @ Id | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 17.3nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 600V |
Vgs (Max) | +18V, -8V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 15A, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK-7 |
Package / Case | TO-263-8, D²ÂPak (7 Leads + Tab), TO-263CA |
Image |
C3M0120090J
LINEAR/ADI
7679
1.46
Cinty Int'l (HK) Industry Co., Limited
C3M0120090J
ADI/
1526
2.39
Bonase Electronics (HK) Co., Limited
C3M0120090J
ADI
6923
3.32
N&S Electronic Co., Limited
C3M0120090J
ADI Electronics
2069
4.25
Viassion Technology Co., Limited
C3M0120090J
LINEAR/ADI
6755
5.18
Yingxinyuan INT'L (Group) Limited