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Description
Datasheet The AOT290L/ AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power. This AOS product reliability report summarizes the qualification result for AOB290L . Accelerated environmental tests are performed on a specific sample size, ALPHA & OMEGA. SEMICONDUCTOR. Document No. PD-O 1475. Version. A. Title. AOB290 Marking Description. TO263(D2PAK) PACKAGE MARKING Aug 9, 2011 100V N-channel MOSFET in TO-220 package. Also available in the D2PAK package as AOB290L . RDS(ON) < 3.5 mOhms at VGS = 10V. 10.16 (.400). REF. 6.47 (.255). 6.18 (.243). 2.61 (.103). 2.32 (.091). 8.89 (.350). REF. - B -. 1.32 (.052). 1.22 (.048). 2.79 (.110). 2.29 (.090). 1.39 (.055). 1.14 (.045 ).
| Part Number | AOB290L |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | ADI Electronics |
| Description | MOSFET N-CH 100V 18A TO263 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 140A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 126nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9550pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 500W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 20A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D²ÂPak) |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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